Thin AgIn 5 S 8 films are grown on glass substrates by pulsed laser deposition using bulk crystals as targets, and their structure, chemical composition, surface morphology, and optical properties (transmission and reflection spectra in the range 0.5-2.5 µ m) are investigated. The transmission and reflection data are used to evaluate the absorption coefficient of the films and the energies of direct and indirect interband transitions. The results obtained for laser-deposited AgIn 5 S 8 films agree well with those for bulk crystals.
Synthesis and Properties of Semiconducting Films of GaBi-Compounds under Conditions of Microgravitation. -The synthesis of a new narrow gap semiconducting compound of the group AIIIBV-GaBi using the method of vacuum deposition followed by annealing under microgravity conditions is given. -(SANYGIN, V. P.; KVARDAKOV, A. M.; PONOMAREV, V. F.; STEBLEVSKII, A. V.; MARENKIN, S. F.; SVECHKIN, V. P.; SHEVCHENKO, V. YA.; LAZAREV, V. B.; Neorg. Mater. 30 (1994) 11, 1366-1371; Inst. obsh. neorg. khim. im. Kurnakova Ross. Akad. nauk, Moskva, Russia; RU)
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