Bit Patterned Media (BPM) for magnetic recording provides a route to thermally stable data recording at >1 Tb/in 2 and circumvents many of the challenges associated with extending conventional granular media technology. Instead of recording a bit on an ensemble of random grains, BPM is comprised of a well ordered array of lithographically patterned isolated magnetic islands, each of which stores one bit. Fabrication of BPM is viewed as the greatest challenge for its commercialization. In this article we describe a BPM fabrication method which combines rotary-stage e-beam lithography, directed self-assembly of block copolymers, self-aligned double patterning, nanoimprint lithography, and ion milling to generate BPM based on CoCrPt alloy materials at densities up to 1.6 Td/in 2 (teradot/inch 2 ). This combination of novel fabrication technologies achieves feature sizes of <10 nm, which is significantly smaller than what conventional nanofabrication methods used in semiconductor manufacturing can achieve. In contrast to earlier work which used hexagonal closepacked arrays of round islands, our latest approach creates BPM with rectangular bitcells, which are advantageous for integration of BPM with existing hard disk drive technology. The advantages of rectangular bits are analyzed from a theoretical and modeling point of view, and system integration requirements such as provision of servo patterns, implementation of write synchronization, and providing for a stable head-disk interface are addressed in the context of experimental results. Optimization of magnetic alloy materials for thermal stability, writeability, and tight switching field distribution is discussed, and a new method for growing BPM islands from a specially patterned underlayer -referred to as "templated growth" -is presented. New recording results at 1.6 Td/in 2 (roughly equivalent to 1.3 Tb/in 2 ) demonstrate a raw error rate <10 -2 , which is consistent with the recording system requirements of modern hard drives. Extendibility of BPM to higher densities, and its eventual combination with energy assisted recording are explored.Index Terms-Bit patterned media, hard disk drive, block copolymer, self-assembly, double patterning, e-beam lithography, sequential infiltration synthesis, nanoimprint lithography, templated growth, thermal annealing, Co alloys, magnetic multilayers, interface anisotropy, magnetic recording, write synchronization, prepatterned servo, areal density.

The temperature and magnetic-field dependences of the resistance of one-dimensional (1D) conductors have been studied in the vicinity of the Thouless crossover. We find that on the weak localization (WL) side of the crossover, these dependences are consistent with the theory of quantum corrections to the resistance, and the phase breaking is due to the quasi-elastic electron-electron interactions (the Nyquist noise). The temperature dependence of the phase coherence time does not saturate, and the quasiparticle states remain well defined over the whole WL temperature range. This fact, as well as observation of the Thouless crossover in 1D samples, argues against the idea of intrinsic decoherence by zero-point fluctuations of the electrons (Mohanty et al., Phys.Rev.Lett. 78, 3366 (1997)). We believe that frequently observed saturation of the phase coherence time is caused by the external microwave noise.Comment: 4 pages, 3 figures; the final version to appear in Phys. Rev. Let

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We have measured the magnetoresistance of narrow (600 -1000 A) and thin (150 -200 A) gold films, one dimensional with respect to weak localization and electron-electron interaction eAects. It is shown that electron-electron collisions with small energy transfer (Nyquist phase-breaking mechanism) govern the phase relaxation in such films over a wide temperature range. The Nyquist time~& was estimated from the magnetoresistance data on the basis of the theoretical dependence AR&"(H)that is applicable to the case when Nyquist phase relaxation dominates other phase-breaking proceses. The temperature dependence~&(T) cc T ' obtained in this way is in good agreement with the theoretical prediction for one-dimensional conductors.

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