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We report that a 10-nm thick Fe film grown at an elevated temperature on MgO͑001͒ forms isolated islands of diameter between 10 and 100 nm. Increasing the deposition temperature causes the islands to decrease in diameter. The resulting films are electrically insulating but show electrical transport properties that vary strongly with growth temperature when capped with 2 nm Au. Films grown at a temperature of 743 K showed a giant magnetoresistance of 0.7% when measured at room temperature. ͓S0163-1829͑99͒01012-7͔
We report on investigations of the crystallographic structure and the magnetic anisotropies of epitaxial iron films deposited onto periodically stepped Ag(001) surfaces using low energy electron diffraction, x-ray diffraction, second harmonic generation (SHG), as well as the Brillouin light scattering (BLS) technique. The focus of the present study lies on the interrelation between the surface morphology of the buffer layers and the magnetic properties of the Fe films, epitaxially grown onto them. Especially the symmetry breaking at the atomic steps is found to create an uniaxial magnetic anisotropy measured by BLS and a very strong anisotropic signal in magnetic SHG.The magnetic properties of ultrathin 3d transition metal films have been widely investigated in the last two decades. In recent years it was found that a reduction of the symmetry of these systems by depositing the films onto vicinal cut substrates leads to additional magnetic surface anisotropies [i,ii,iii,iv,v], their magnitude depending on the average step density [vi,vii]. These anisotropies originate from different contributions. Due to the broken symmetry at the step edges the magnetic environment changes.The reduced coordination number and the uniaxial strain induced by the lattice mismatch modificate the band structure and thus the magnetic behavior. A great advantage of these step-induced anisotropies is that they can be artificially controlled by changing the vicinal miscut angle of the substrate, or, in other words, the average step density of the interface or surface [vi,vii]. On the other side these anisotropies can be used in future technical applications because of the artificially controllable character of the step density and so of the magnetic anisotropies. Vicinal to (001) GaAs wafers with fcc Ag-buffers were used in this work as substrates for preparation of bcc Fe-films [viii]. The GaAs wafers of orientation (1 1 11) and (1 1 17), as well as (0 0 1)-oriented substrates for reference, were chemically cleaned and heated to 870 K for one hour in ultrahigh vacuum (UHV) to remove the oxides and adsorbates. The base pressure during preparation and deposition was typical lower than 5x10 -10 mbar. To achieve epitaxial growth of the 1500 Å thick fcc Ag-buffer layer the cleaned wafer was covered with a 10 Å thick Fe seed layer. After the deposition the Ag-buffer was annealed at 570 K for 1 hour to improve the surface morphology. bcc-Fe films of different thicknesses were deposited onto the Ag buffer with a deposition rate of 0.1 Å/s. The first 10 Å of Fe were grown at room temperature to avoid intermixing at the interface, followed by growth at T=370 K. To prevent the samples from oxidization and to insure symmetric interfaces both at the bottom and the top of the Fe-layer, the films were finally covered with 20 Å thick Ag film and 20 Å thick Cr cap layer.The chemical cleanliness and the crystallographic structure of the films were controlled in-situ by Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The AES ...
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