Surface and subsurface structures of porous GaN prepared by anodizing epitaxial GaN layers grown on SiC substrates are investigated by atomic-force microscopy. Comparison of the images of the porous GaN surfaces with those taken on planes cleft perpendicular to the surface shows that the pores are formed along the boundaries of columnar structures of the original GaN films. X-ray investigations show that the porous GaN has less residual stresses than the initial GaN epitaxial layers. Use of porous GaN as a buffer layer for growth of low-stress GaN is proposed.
The influence of (001) GaAs substrate misorientation in the [001] direction on the parameters of InAs quantum dot (QD) ensembles has been studied by means of atomic force microscopy. It is shown that terrace patterning on vicinal surfaces permits control over the density, size and size uniformity of InAs QDs during their growth in the Stranski-Krastanow mode. By using the Monte Carlo approach for simulating the surface annealing, it was shown that surface misorientation exhibits a stable tendency towards self-organization of undulate structure.
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