Articles you may be interested inComparative analysis of electronic structure and optical properties of crystalline and amorphous silicon nitrides

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Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. Amorphous Si layers were grown by krypton plasma sputter deposition at 310 'C. By pulsation of the substrate potential between 0 and 50 eV, the Kr concentration in the layers could be varied to a maximum of 5.5 at. %. A model which describes trapping of inert gas atoms in the sputtered layer in terms of implantation and trapping, diffusion, growth, resputtering, and gas sputtering is presented. High-resolution electron microscopy, electrode-probe (x-ray) microanalysis, positron annihilation, Raman spectroscopy, Mijssbauer spectroscopy, and bending and hardness measurements were performed on the deposited layers. It turns out that the ion assisted growth Ieads to a strong reduction of open volume defects. The experiments point to the presence of very small Kr agglomerates. From the Mossbauer experiments a lower limit of 250 K for the Debye temperature of the Kr agglomerates is derived. Molecular-dynamic simulations from which the Debye temperatures of Kr mono-, di-, and trimers in amorphous Si can be derived are presented. The simulations indicate the presence of predominantly Kr monomers and dimers. 0 1995 American Institute of Physics.

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