Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride. In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field. We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.
Abstract. We present a unified description of the excitonic properties of four monolayer transition-metal dichalcogenides (TMDC's) using an equation of motion method for deriving the Bethe-Salpeter equation in momentum space. Our method is able to cope with both continuous and tight-binding Hamiltonians, and is less computational demanding than the traditional first-principles approach. We show that the role of the exchange energy is essential to obtain a good description of the binding energy of the excitons. The exchange energy at the Γ−point is also essential to obtain the correct position of the C-exciton peak. Using our model we obtain a good agreement between the Rydberg series measured for WS 2 . We discuss how the absorption and the Rydberg series depend on the doping. Choosing r 0 and the doping we obtain a good qualitative agreement between the experimental absorption and our calculations for MoS 2 and WS 2 . We also derive a semi-analytical version of Ellitot's formula for TMDC's.arXiv:1704.00975v1 [cond-mat.mes-hall]
The electronic and optical properties of 2D hexagonal boron nitride are studied using first principle calculations. GW and BSE methods are employed in order to predict with better accuracy the excited and excitonic properties of this material. We determine the values of the band gap, optical gap, excitonic binding energies and analyse the excitonic wave functions. We also calculate the exciton energies following an equation of motion formalism and the Elliot formula, and find a very good agreement with the GW +BSE method. The optical properties are studied for both the TM and TE modes, showing that 2D hBN is a good candidate to polaritonics in the UV range. In particular it is shown that a single layer of h-BN can act as an almost perfect mirror for ultraviolet electromagnetic radiation. arXiv:1807.06413v1 [cond-mat.mes-hall]
Excitons in monolayer transition-metal-dichalcogenides (TMDs) dominate their optical response and exhibit strong light-matter interactions with lifetime-limited emission. While various approaches have been applied to enhance light-exciton interactions inTMDs, the achieved strength have been far below unity, and a complete picture of its underlying physical mechanisms and fundamental limits has not been provided. Here, we introduce a TMD-based van der Waals heterostructure cavity that provides nearunity excitonic absorption, and emission of excitonic complexes that are observed at ultra-low excitation powers. Our results are in full agreement with a quantum theoretical framework introduced to describe the light-exciton-cavity interaction. We find that the subtle interplay between the radiative, non-radiative and dephasing decay rates plays a crucial role, and unveil a universal absorption law for excitons in 2D systems. This enhanced light-exciton interaction provides a platform for studying excitonic phase-transitions and quantum nonlinearities and enables new possibilities for 2D semiconductor-based optoelectronic devices. * These authors contributed equally †
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