Shrinking feature sizes, novel device designs as well as stress engineering increase the need for threedimensional process and device simulations.We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for stress engineering (similar to the structure presented in Ref.[1]) and a 0-FinFET (similar to structures presented in Refs. [2X3]). TCAD simulations of the full process flow as well as of the electrical device characteristics are performed. We also show examples of 3D oxidation simulations with Sentaurus Process.
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