No abstract

Metal silicides play a significant role in the preparation of ohmic contacts and Schottky barriers on silicon. The formation of ohmic contacts is carried out by applying a metal film with a thickness of ∼ 100 nm to silicon, followed by annealing at temperatures of 400–600 °C, as a result of which there is a reaction between silicon and metal with the formation of silicide. With this technology, silicon diffusion leads to instability of devices. In this regard, the authors developed an improved technology for the formation of silicides of refractory metals to obtain ohmic contacts. Ion implantation allows, due to ionic mixing, forming nickel silicide on the surface of the samples when heated. It is important that, with an increase in the radiation dose, the formation of Ni2Si silicide slows down. This effect can be explained by the formation of a dielectric Ni3Si2. Similar phenomena were observed during the bombardment by oxygen and nitrogen ions.

The theoretical foundations of the process of electric transfer (ET) in melts growing during contact melting (CM) of binary systems are considered. It is shown when the modes of this process will be carried out-speed-up and speed-down. It has been established that electro transfer makes an additional contribution to the magnitude of the rate of macroscopic flow (determined by the displacement of inert tags), due to the inequality of the partial diffusion coefficients of the melt components. The electric current passing through the liquid layer, formed by the CM, can have a very significant impact on the rate of its growth. Depending on the direction of the current, both increase and decrease in the speed of the CM can be observed. The paper also discusses the main regularities of the ET process at a CM, studies the effect on its parameters of the degree of difference in some physicochemical characteristics of the melt.

This study is dedicated to investigating contact melting, including cases of electrotransport is a Sn-Bi system after introduction of a small admixture of indium. It has been shown that the dopant ambiguously influences the rate of the contact melting. The structure of obtained alloys is strongly non-uniform and abounds with dendritic forms. An attempt is made to explain the results.