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In this Letter, we design Janus γ-[Formula: see text] ([Formula: see text] S, Se, Te) monolayers and predict their piezoelectricity and carrier mobility by using first-principles simulations. Janus γ-[Formula: see text] are found to be indirect semiconducting characteristics with a camel's back-like dispersion in the top valence band. We discovered that Janus γ-[Formula: see text] are piezoelectric with high out-of-plane piezoelectric coefficients. Our calculated results for the piezoelectricity demonstrate that the out-of-plane piezoelectric coefficient d31 of Janus γ-Sn2STe is calculated to be 1.02 pm/V, larger than that of other 2D structures. Moreover, our calculations for the transport features reveal that while the carrier mobility of γ-Sn2SSe is directionally isotropic, the electron mobility of both γ-Sn2STe and γ-Sn2SeTe exhibit high anisotropy along the two transport directions. The Janus γ-[Formula: see text] monolayers have high electron mobility, especially the electron mobility of γ-Sn2STe exceeds 105 cm2 V–1 s–1, which is potential for nanoelectronic applications.

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We propose and examine the stability, electronic properties, and transport characteristics of asymmetric monolayers $X$WGeN$_2$ ($X =$ O, S, Se, Te) using {\it ab-initio} density functional theory. All four monolayers...

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Surface functionalization is one of the useful techniques for modulating the mechanical and electronic properties of two-dimensional systems.