Beam lead technology inherently lends itself to integrated microwave devices. Closely controlled junction geometry leads to uniformity of device characteristics. Specially designed tapered leads for improved microwave matching are easily formed using this technology. High speed bonding is also possible, with automatic equipment. These advantages are obtained with a process sequence which allows the use of a single metal deposition step for both the Schottky barrier and beam lead interconnection system. Molybrier and the beam lead interconnections. Typical I-V and 1/C2-V plots indi-denum with a gold overlay is the metallurgical system used to form the barcate uniformity of barrier height and "n" factor. Values of n are less than 1.1 with the barrier height at 0.61 e.v. Measurements of change in barrier height with temperature up to 500°C show less than 1 1 0 mV variation. With the stable moly barrier used, device parameters are a compromise of geometry matching of t 1 0 mV at 1 ma. The Rs is 10 ohms and the Cj is less than 0.3 pf, and epitaxy layer. DC characteristics of these devices give forward current giving an RC product less than 3 x IO-'* sec. Using these devices in a chromegold on alumina microstrip integrated mixer, overall single sideband noise figures of 6.5 -7.0 dB were measured, with a 1.5 dB I F noise figure, at 9.4 GHz. Measured noise figure was essentially constant over a range of 1-10 mw of local oscillator power, and the diodes will withstand ovnlr 500 mw cw RF power. These values compare favorably with discrete packaged devices. Fabrication in series pairs, matched quads or other configurations can be accomplished with good uniformity.
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