This work deals with the study of photoluminescence properties of ZnxMg1-xSe epilayers grown by molecular beam epitaxy on (001) GaAs and (111) ZnTe substrates and ZnxMg1-xSe 1ayers obtained by thermal diffusion of Mg into ZnSe single crystals. Luminescence spectra of Zn x Mg1x Se layers are dominated by blue and violet emission bands with maxima positioned in the range of photon energies: 3.05-3.28 eV, 2.88-3.04 eV, 2.81 eV and 2.705 eV, depending on preparation conditions. In some samples the blue luminescence is observed up to room temperature.
This work deals with the study of the photoluminescence and reflectivity properties of ZnxMg1-xSe epilayers grown by molecular beam epitaxy on (001)GaAs and (111)ZnTe substrates. The photoluminescence spectra of Zn x Mg 1x Se layers grown on GaAs and ZnTe substrates are dkinated by blue emission bands. The energetical positions and relative intensities of the bands depend on Mg contents in the epilayers. The shift of the maxima of blue emission toward higher photon energies and a simultaneous steep increase in the linewidth with an increase in Mg concentratioii are observed. A small amount of Mg added to ZnSe leads to a sharp increase in the linewidth from 2 meV in pure ZnSe layer grown on GaAs substrate to about 180 meV in Zn0.78 Μg0.22 Se.
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