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The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz ͑103 m wavelength͒, 8.9 THz ͑33.7 m͒, and 16.2 THz ͑18.5 m͒ from the Si/SiGe quantum cascade heterostructures.

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