Formation of Ag nanostructures on the Si(557) surface containing regular steps of three bilayer height have been studied by scanning tunneling microscopy, low energy electron diffraction and Auger electron spectroscopy at room temperature. It is found that the ordered arrays of nanodots and nanowires of Ag can be formed on this surface. It was shown that a sample exposure in the vacuum before Ag growth affects the shape of the forming Ag islands. This effect is caused by oxygen adsorption on the silicon surface from the residual atmosphere in the vacuum chamber. When Ag is deposited on the clean silicon surface the islands, overlapping several (111) neighboring terraces, form. The arrays of silver nanowires elongated along steps and silver nanodots, arranged in lines parallel to the steps, can be formed on the Si(557) surface depending on the amount of adsorbed oxygen.
Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800• C.Surface diffusion coefficients versus temperature have been measured.
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