The magnetoresistance of GeхSi1-х (x = 0.002¸ 0.11) whiskers with an acceptor concentration (Na = 3x1018¸ 2.1019 cm-3) near the metal-insulator transition (MIT) was studied at low temperatures (4.2 - 77)K in magnetic fields up to 14 T. It is shown that at 4.2 K the magnetoresistance of the Ge-Si whiskers on thedielectric side of the MIT is quadratic, while the magnetoresistance of the crystals on the metal side of the MIThas an exponential dependence on the magnetic field. In the samples in the immediate vicinity to the MIT on thedielectric side, negative magnetoresistance was detected, whereas in metal samples with a high germaniumcontent (x = 11 at.%) an anomalous positive magnetoresistance occurs. The resulting anomalous dependences arerespectively explained by the conductivity with respect to the delocalized A+ states of the upper Hubbard bandand the increase in the electron-electron interaction in Ge-Si whiskers at increasing germanium content.
In this work, the important thermal and kinetic characteristics of crystals are calculated. It was shown that in a state of thermodynamic equilibrium, the thermal properties of crystals are additive, and their value for an entire crystal is calculated by summing the values of thermal properties of the crystal lattice and the properties of the gas of free charge carriers in a crystal. These properties are fully characterized by the appropriate Gibbs potentials. In this work it was also shown that when the electric field E and temperature gradient ΔrT are created in a crystal, and this crystal is placed in the magnetic field with the magnetic inductance vector B, then there the electric charge and heat transport processes begin to exist in the crystal. These processes are described by the generalized electric and heat conduction equations. The tensors and the scalar coefficients in these equations – these are the kinetic properties of the crystals. They describe the nature of their actual properties and they have widespread and pragmatic applications in modern solid-state electronics
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