The thermodynamics of the transport of
normalGaAs
by
AsCl3
in an open system has been investigated theoretically and a new approach taken to determine the maximum possible amount of
normalGaAs
that can be deposited. The results of the calculations have been checked experimentally, using hydrogen and argon as a carrier gas, by measurements of the amount of
normalGa false(normalor GaAsfalse)
withdrawn from the source and also of total amounts of
normalGaAs
deposited. We show that in the range of temperatures of practical interest the experimental results can be accounted for by a simple theoretical analysis assuming a single dominant equilibrium reaction. The theoretical work and the experimental measurements have led to an exact knowledge of the chemical compounds involved and have been used as a basis for a preliminary investigation of the growth mechanisms. The problem has been approached by measurements not only of the total amount of deposit but also of the rate of growth on a
normalGaAs
substrate in the presence of various temperature gradients. A kinetic limitation of the growth rate appears clearly.
Nous présentons nos résultats récemment acquis dans la maîtrise du niveau et du profil de dopage de couches d'arséniure de gallium préparées par épitaxie en phase vapeur. Nous décrivons un procédé de dopage par rétrodiffusion, et exposons nos méthodes de caractérisation
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