Hydrogenated amorphous silicon (a-Si:H) films, used for light absorbers of p-i-n solar cells, were deposited at various deposition rates (Rd) ranging over two orders of magnitude (Rd ∼ 2 × 10−3–3 × 10−1 nm/s) by using diode and triode plasma-enhanced chemical vapor deposition (PECVD). The impact of varying Rd on the light-soaking stability of the solar cells has been investigated. Although a reduction of Rd mitigates the light-induced degradation in the typical range of Rd (>10−1 nm/s), it remains present even in the very low Rd (<10−2 nm/s), indicating that the metastable effect persists in a-Si:H regardless of Rd. The best performing cell, whose a-Si:H absorber is characterized by low amount of metastable defect and high bandgap, can be obtained at Rd of ∼1–3 × 10−2 nm/s by triode PECVD. By applying such a-Si:H in the improved p-i-n devices, we demonstrate two record independently confirmed stabilized efficiencies of 10.22% for single-junction and 12.69% for a-Si:H/hydrogenated microcrystalline silicon (μc-Si:H) tandem solar cells.

Silicon wafer wire-sawing experiments were realized with different sets of sawing parameters, and the thickness, roughness, and cracks depth of the wafers were measured. The results are discussed in relation to assumptions underlying the rolling-indenting model, which describes the process. It was also found that the silicon surface at the bottom of the sawing groove is different from the wafer surface, implying different sawing conditions in the two positions. Furthermore, the measured parameters were found to vary along the wire direction, between the entrance of the wire in the ingot and its exit. Based on these observations, some improvements for the wire-sawing model are discussed.

We report that thin-film silicon solar cells exhibiting high stabilized efficiencies can be obtained by depositing hydrogenated amorphous silicon (a-Si:H) absorbers using triode-type plasma-enhanced chemical vapor deposition. The improved light-soaking stability and performance of solar cells are also realized by optimizing the device design, such as p and p-i buffer layers. As a result, we attain independently confirmed stabilized efficiencies of 10.1-10.2% for a-Si:H single-junction solar cells (absorber thickness: t i = 220-310 nm) and 12.69% for an a-Si:H (t i = 350 nm)/ hydrogenated microcrystalline silicon (µc-Si:H) tandem solar cell fabricated using textured SnO 2 and ZnO substrates, respectively. The relative efficiency degradations of these solar cells are >10 and 3%, respectively, under 1 sun illumination at 50°C for 1000 h.