Drift velocities for holes in high-purity Si were measured for fields between about 3 and SX 10" V/cmã nd temperatures between 6 and 300'K for the crystallographic directions (100), (110), and (111).The Ohmic mobility is theoretically interpreted on the basis of a two-band model consisting of a spherical parabolic and a spherical nonparabolic band, and the relaxation-time approximation.The low-temperature Ohmic mobility is strongly influenced by the nonparabolicity of the heavy-hole band. The high-field region (E) 10' V/cm) was analyzed using a single warped heavy-hole band model and a Monte Carlo technique.Anisotropy of hot-hole drift velocity is associated with warping of the valence band. Optical-and acousticscattering mechanisms are found to be of comparable strength,
With the time-of-flight technique we have measured the longitudinal diffusion coefficient of electrons in silicon at 300 K for fields from Ohmic up to 50 kV/cm. The results have been interpreted by means of Monte Carlo calculations with a theoretical model which includes the many-valley (ellipsoidal and nonparabolic) structure of the band, acoustic intravalley, and several f and g intervalley scattering mechanisms.
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