An on-chip electron spin resonance technique is applied to reveal the nature and origin of surface spins on Al_{2}O_{3}. We measure a spin density of 2.2×10^{17}  spins/m^{2}, attributed to physisorbed atomic hydrogen and S=1/2 electron spin states on the surface. This is direct evidence for the nature of spins responsible for flux noise in quantum circuits, which has been an issue of interest for several decades. Our findings open up a new approach to the identification and controlled reduction of paramagnetic sources of noise and decoherence in superconducting quantum devices.

Noise and decoherence due to spurious two-level systems located at material interfaces are long-standing issues for solid-state quantum devices. Efforts to mitigate the effects of two-level systems have been hampered by a lack of knowledge about their chemical and physical nature. Here, by combining dielectric loss, frequency noise and on-chip electron spin resonance measurements in superconducting resonators, we demonstrate that desorption of surface spins is accompanied by an almost tenfold reduction in the charge-induced frequency noise in the resonators. These measurements provide experimental evidence that simultaneously reveals the chemical signatures of adsorbed magnetic moments and highlights their role in generating charge noise in solid-state quantum devices.

We demonstrate a planar superconducting microwave resonator intended for use in applications requiring strong magnetic fields and high quality factors. In perpendicular magnetic fields of 20 mT, the niobium resonators maintain a quality factor above 25 000 over a wide range of applied powers, down to single photon population. In parallel field, the same quality factor is observed above 160 mT, the field required for coupling to free spins at a typical operating frequency of 5 GHz. We attribute the increased performance to the current branching in the fractal design. We demonstrate that our device can be used for spectroscopy by measuring the dissipation from a pico-mole of molecular spins. V C 2012 American Institute of Physics. [http://dx