Titanium disilicide was formed by multiply-scanned electron beam irradiation of titanium films of nominal thickness 1200Å on silicon substrates. Samples were annealed at power densities of 2 to 52.5Wcm−2 using times in the range of 1 to a few hundreds seconds. Rutherford backscattering analysis was used to study the metal redistribution and to estimate the approximate compositions and thicknesses of the films. Compounds were identified by X-ray and electron diffraction. Sheet resistance was measured by the four probe technique and surface topography inspected by scanning electron microscopy.The silicide thickness achieved depends only on annealing time for power densities in the range of 20 to 50Wcm−2 and hence is independent of heating rate and peak temperature during the heating cycle.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.