Strong temporal hysteresis effects in the population kinetics of pumped and scattered lower polaritons (LPs) have been observed in a planar semiconductor microcavity under a nanosecond-long pulsed resonant excitation (by frequency and angle) near the inflection point of the LPs' dispersion. The hysteresis loops have a complicated shape due to the interplay of two instabilities. The self-instability (bistability) of the nonlinear pumped LP is accompanied by a strong parametric instability which causes an explosive growth of the scattered LPs' population over a wide range of wave vectors. Finally, after a 30-500 ps period, a three-mode scattering pattern forms, thereby demonstrating a dynamically self-organized regime of the optical parametric oscillator. Stability is maintained by the presence of numerous weak "above-condensate" modes; the whole system therefore appears to be highly correlated.
Исследовано магнетосопротивление тонких монокристаллов графита с колоннообразными дефектами (КД). Обнаружен периодический по полю вклад в магнетосопротивление с периодом 7,5 Тл. Оценка диаметра КД с помощью атомносилового микроскопа показывает, что периодичность осциллирующего вклада по потоку близка hc/e на дефект. Результат согласуется с измерениями осцилляций магнетосопротивления Ааронова-Бома на графеновых мезоскопических кольцах [S. Russo et al. Phys. Rev. B77, 085413 (2008)].
Through-focus scanning optical microscopy (TSOM) method based on use of a library, which is composed of simulated defocused images of nanosized silicon lines on the top of a monocrystalline silicon substrate, is demonstrated. The images are simulated using Finite-Differences in Time-Domain (FDTD) method taking into account optical aberrations of the experimental setup, which are measured experimentally. Consideration of the optical aberrations allows us to reduce the discrepancy between experimental and simulated defocused images of the samples under study to the value of ≈2%in contrast to ≈10% when the aberrations are not taken into account. It results in ≈5% recognition accuracy for critical dimension (CD) values in the range 40-150 nm.
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