In the article, the ways of increasing the efficiency of photoelectric transducers due to the application of SnO2 | Zn2O3 -SiOx -nSi -n + Si heterostructures and elaboration of the technology of contact systems production are dwelt upon. Physical processes, taking place in heterostructures, are empirically examined, the methodology and modes of their production are analyzed. It is sustained, that photoelectric transducers, produced on the basis of such structures, have significant advantages in comparison with foreign analogues. The authors proposed an alternative technology for creating contact systems to heterostructures and experimentally proved that annealed contact systems have advantages, primarily in terms of reducing the number of technological operations and are still relevant. The use of such a composition allowed to reduce the annealing temperature, which led to improved morphology of the obtained contact systems compared to traditional ones. It is proved that the application of such contact systems will increase the efficiency of photoelectric appliances due to simplicity of technological process and cheap materials, that will lead to the reduction of cost price of the product.
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