The approaches to creation of the materials providing simultaneously high indicators of transparency in the visible spectrum and shielding in a wide radio frequency band are considered in this paper. The analysis and comparison of the main designs of such materials, as well as approaches to their creation, including multilayer and conductive mesh structures, is carried out. The results of our own theoretical studies of the disordered mesh structure are presented, which allow one to obtain a light transmission coefficient from 90 to 98 % in combination with an electromagnetic interference shielding efficiency from 50 to 65 dB. The best results practically achieved to date (shielding efficiency equal 45 dB in the range from 10 kHz to 20 GHz with a light transparency of more than 80 %) were obtained on mesh structures by photolithography, which is a significant limiting factor of this approach. The created multilayer structures show, in general, lower characteristics. However, the technology for their production is better scaled, and the optimization of the thicknesses and chemical composition of multilayer structures can significantly increase them. In this regard, technological aspects may come to the fore when taking into account the possibility of subsequent scaling of the technology and economic indicators when choosing an approach for the implementation of the materials with the required characteristics.
A methodology has been developed for evaluation the channel transmission of nanoelectronic devices on low-dimensional 2D structures with quantum confinement and transverse current transfer. The advantage of the developed methodology is to ensure the numerical stability and increased speed of the computational model of channel transmission with a different number of heterostructure layers, which allows optimizing the calculation of the current-voltage characteristics of nanoelectronic devices and predicting their electrical parameters.
Predictor of the reliability indicators of resonant tunneling diodes with a generalization of the methodology for nanoelectronic heterostructure devices with quantum confinement and transverse current transfer has been developed. The advantage of the developed software is the possibility of interactive input of additional experimental information for further calculation of point and interval estimates of the reliability indicators of semiconductor devices using Bayesian inversion, which allows predicting these indicators under conditions of limited experimental information.
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