We investigate the transport properties of thin-film transistors using indium oxide (In2O3)/gallium oxide (Ga2O3) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility increases with the film resistivity to μFE = 51.3 cm2/Vs and ON/OFF current ratio to 108 due to combinatorial layer thickness modulation. With the Ga2O3 layer thickness ratio increase to R = 14.35%, these observations are accompanied with one-order-of-magnitude reduction in the transistor subthreshold swing to 0.38 V/decade and suggest a trap-limited conduction mechanism upon which the reduced scattering centers due to annihilation of subgap states improve the device electric characteristics without post-growth annealing.

Control of light at the nanoscale is demanding for future successful on-chip integration. At the subwavelength scale, the conventional optical elements such as lenses become not functional, and they require conceptually new approach for a design of nanoscale photonic devices. The most common approach to the subwavelength photonics is based on plasmonic nanoparticles and plasmonic waveguides due to their ability to capture and concentrate visible light at subwavelength dimensions. But the main drawback of all plasmonic devices is their intrinsic losses due to metallic components which affect strongly the overall performance of plasmonic structures limiting their scalability and practical use.

W e show here that the oxide-thickness dependence o f the s-poîarized SHG from S i ( l l l ) covered with a thick thermal oxide is completely described by multiple reflections in the oxide film. For the p-polarized response, a strong enhancement with thickness is observed, which cannot be explained in this way. These measurements show that one should be cautious in analyzing the SHG from a buried interface, and carefully take into account the linear optics involved.

This article is based on the results of an analysis of existing biological collections in Russia and abroad set up in the framework of the project “Scientific Basis of the National Biobank –Depository of Living Systems” by M.V. Lomonosov Moscow State University [1].

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The technique of fabrication of one-dimensional anisotropic photonic crystals and microcavities based on porous silicon with birefringence has been developed. The spectra of linear reflectance demonstrate presence of photonic band gap (PBG) and microcavity mode located in the center of PBG. Their spectral position is tuned upon the sample rotation around its normal and/or rotation of incident light polarization plane. Enhancement of secondand third-harmonic generation for the fundamental wavelength resonant to the long wavelength edge of PBG due to phase matching is observed by angular spectroscopy. The angular positions of second-and third-harmonic peaks are determined by porous silicon dispersion and shifted for different polarisation of the fundamental wave due to the dielectric function anisotropy.

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