The effects of hydrogen treatment on electrical properties, luminescence spectra, and deep traps in InGaAlP and InGaP have been studied. It is shown that acceptors and donors (both shallow and deep) can be effectively passivated by hydrogen. The hydrogen is found not only to passivate the main electron and hole traps in our samples, but also to generate electron traps in n-InGaAlP and hole traps in p-InGaP. The influence of hydrogen treatment mode (direct plasma or a crossed-beams source in which the low-energy ion bombardment of the surface is effectively eliminated) on hydrogen concentration and hydrogen profiles in InGaAlP are discussed.
It is shown that the low electrical activity of Zn in MOCVDgrown InGaAlP is related to hydrogen passivation during growth and that the effect is sensitive to growth conditions. We also discuss the results of hydrogen plasma treatment of p- and n-InGaAlP layers.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.