高效率高功率976 nm半导体激光芯片设计与制备

Abstract

Conclusions In summary, we demonstrate the design and fabrication of highefficiency, highpower 976 -nm lasers. These devices are reliable and efficient. The PCE is as high as 72.4% at a current of 10 A; however, the efficiency decreases to 61.3% when the current reaches 30 A.