铝诱导结晶法制备高度(111)择优取向多晶硅薄膜及成核分析

黄添懋,; 陈诺夫,; 张兴旺,; 白一鸣,; 尹志岗,; 施辉伟,; 张汉,; 汪宇,; 王彦硕,; 杨晓丽,

doi:10.1360/ze2010-40-11-1378

Sci. Sin.-Tech.

2010

DOI: 10.1360/ze2010-40-11-1378

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铝诱导结晶法制备高度(111)择优取向多晶硅薄膜及成核分析

黄添懋黄添懋¹,

陈诺夫陈诺夫²,

张兴旺张兴旺³

et al.

Abstract: et al. Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis.

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铝诱导结晶法制备高度(111)择优取向多晶硅薄膜及成核分析

Abstract: et al. Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis.

Cited by 0 publications

References 4 publications

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