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Objective Short wavelength, shortpulse, and highcoherence laser sources are urgently needed for research on ultrawide dynamics at the microscopic scale. Additionally, with the demand for an everincreasing chip computing speed, the semiconductor field urgently requires small and lowcost extreme ultraviolet light sources for material development and wafer defect detection. Highorder harmonic (HHG) technology is used to realize laboratory desktop applications and produce highcoherence and highresolution extreme ultraviolet (EUV) light sources, which is one of the most reliable technologies and is gradually becoming one of the most important tools for atomic, molecular, advanced quantum, and other materials research as well as nanoimaging. Based on the semiconductor field and experimental requirements, we build a set of HHG -EUV sources using a commercial Ti ∶sapphire laser, which is a highly stable, highpower 13.5 -nm source. This will advance research in material development, semiconductor performance characterization, biomedical imaging, wafer defect detection, and other fields of research.Methods Highorder harmonic processes can be explained by the semiclassical threestep model, and several experiments have demonstrated that Ti ∶sapphire lasers are among the best driving sources for generating an EUV source. Focused highaveragepower laser pulses interacting with rare gases produce harmonics that cover the extreme ultraviolet(UV)and soft Xray regions, thereby making them the most efficient source for electrodynamics studies. The reaction region is commonly characterized using nozzles, gas cells, and hollow waveguides. The latter has the highest harmonic conversion efficiency owing to the phase modulation process; however, it is difficult to calibrate and achieve a stable output over long periods. To achieve a high flux and stable output from a 13.5 -nm harmonic source, we design and build a beam stabilization control system to assist the alignment process and maintain beam stability. In addition, we build a dualoptical and flatfield spectrometer that can effectively optimize the harmonic aberration in the harmonics generated by the device. Results and DiscussionsWhen helium is used as the generation gas, the spectral distribution around 13.46 nm is filtered with Zr films. A calibrated photodiode is used to measure the optical power signal, and the total power generated by the light source is industry. This light source will be popularized and validated in the fields of EUV interference lithography experiments, photoresist research and development, material parameter measurements in EUV lithography technology, nanometer or quantum material research and development, and semiconductor wafer defect detection.
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