双晶电光q开关消光比的研究

Abstract

Objective Electrooptic (EO) Qswitching technology has been extensively used to fabricate pulsed lasers. Its advantages of a faster switching rate, better holdoff ability, and controllable repetition rates enable the generation of energetic short laser pulses. To date, practical EO crystals include LiNbO 3 (LN), LiTaO 3 (LT), KD 2 PO 4 (DKDP), and RbTiOPO 4 (RTP). To achieve a low driving voltage, the laser must propagate along the nonopticalaxis direction of these crystals, which introduces additional phase retardation induced by natural birefringence. Using a second crystal that is rotated 90° with respect to the first crystal is necessary to compensate