Электрические и оптические свойства нерелаксированных гетероэпитаксиальных структур InAs-=SUB=-1-x-=/SUB=-Sb-=SUB=-x-=/SUB=-

Abstract

The electrical and galvanomagnetic properties of unrelaxed heteroepitaxial structures of InAs1-xSbx (x = 0.43 and x = 0.38) were studied in a wide temperature range of 5-300K and magnetic fields up to 8 T. The band gap of the composition InAs0.57Sb0.43 was estimated from the thermo-activation dependence of the electrical conductivity, and is equal to 120 meV. The electron concentration in InAs1-xSbx (n=6·1016 cm-3 for InAs0.62Sb0.38 and n=5·1016 cm-3 for InAs0.57Sb0.43) determined from the Hall effect and consistent with the electron concentration calculated from Shubnikov-de Haas oscillations. Also, implemented spectral ellipsometric studies of unrelaxed heteroepitaxial structures of InAs1-xSbx (x = 0.43 and x = 0.38) in the photon energy range of 1-6 eV. The spectral dependences of the imaginary and real parts of the dielectric constant are determined. The dispersion dependences of the refractive indices and extinction are calculated and given.