Фотоэлектрические параметры фотоприемников на основе тонких микрокристаллических пленок перовскита CH-=SUB=-3-=/SUB=-NH-=SUB=-3-=/SUB=-PbI-=SUB=-3-=/SUB=-

Abstract

The photoelectric characteristics of photoresistance type photodetectors based on microcrystalline films of organometallic perovskite CH3NH3PbI3 with gold and aluminum contacts were investigated. The maximum photosensitivity of the photodetectors was 30 A / W. The rise and fall times of photoconductivity ranged from 2.7 to 15.3 μs.