Abstract:Implantation of ions into amorphous silicon dioxide ( a -SiO_2) is widely used in microelectronics (mainly, using Si ions) and in the production of light-guiding components of optical fibers (Ge, P, B ions). All of these elements interact with the matrix oxygen, so the point defects that occur during implantation are not only the result of the displacement of the silicon–oxygen frame atoms from their equilibrium positions, but also reflect the specific chemical interaction in the material. In this study, inert… Show more
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