Фемтосекундный Лазерный Отжиг Многослойных Тонкопленочных Структур На Основе Аморфных Германия И Кремния

Abstract

Femtosecond laser annealing of thin-film multilayered structures based on amorphous silicon and germanium were studied. The original samples were synthesized via plasma-enhanced deposition on glass substrate. Scanning electron microscopy revealed formation of periodic surface structures in the irradiated films. Raman spectra analysis revealed crystallization of amorphous germanium as a result of femtosecond laser pulses action, as well as fluence-dependent mixture of the germanium and silicon layers at absence of crystallization of the amorphous silicon layers.