Фазовый состав, кристаллическая структура, диэлектрические и сегнетоэлектрические свойства тонких пленок Ba-=SUB=-2-=/SUB=-NdFeNb-=SUB=-4-=/SUB=-O-=SUB=-15-=/SUB=-, выращенных на подложке Si(001) в атмосфере кислорода

Abstract

The phase composition, nanostructure, and properties of Ba2NdFeNb4O15/Si(001) multiferroic thin films have been studied by X-ray diffraction analysis, scanning probe microscopy, and capacitance-voltage characteristics analysis. The RF cathode sputtering in an oxygen atmosphere was used for films fabrication. It has been found that the obtained Ba2NdFeNb4O15 films are single-phase, impurity-free, polycrystalline textured (c-oriented), and the out-of-plane strain is 0.8%, which leads to the presence of ferroelectric properties at room temperature. It is shown that the surface roughness of the films is ~ 15.39 nm, the lateral size of the crystallites is ~ 134 nm, and the relative permittivity in the temperature range of -190…150 °C is 95-130. The reasons for the revealed regularities are discussed.