Температурные зависимости излучательного и безызлучательного времени жизни носителей в квантовых яма-точках InGaAs

Abstract

Heterostructure with InGaAs/GaAs quantum well-dots was investigated in temperature range 10-300 K using photoluminescence spectroscopy in CW mode as well with time resolution. Obtained decay times were splitted into radiative and nonradiative components of carrier lifetime. It is found that radiative lifetime demonstrates exponential growth with temperature rise, while temperature dependence of nonradiative one is much weaker.