Abstract:Resistive-type structures based on gallium oxide films were studied. Ga2O3 films were obtained by radio-frequency magnetron-assisted sputtering of a β-Ga2O3 (99.9999%) target onto unheated sapphire substrates with pre-deposited platinum electrodes. The structure and phase composition of the gallium-oxide films were determined. The current–voltage characteristics of the samples without and with exposure to radiation at the wavelengths λ = 254 nm were measured. It was shown that after annealing, the photocurrent… Show more
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