Сквозное Концентрационное Профилирование Гетероструктурных Солнечных Элементов

Abstract

Heterojunction solar cells based on single-crystal silicon were studied by means of electrochemical capacitance-voltage profiling. The features of electrochemical capacitance-voltage profiling of modern multilayer heterojunction solar cells are analyzed. The free charge carriers depth distribution profiles over the entire thickness of the samples, including, for the first time, in the layers of conducting indium tin oxide, are obtained.