Фотоника-2021 : Тезисы Докладов Российской Конференции И Школы Молодых Ученых По Актуальным Проблемам Полупроводниковой Фотоэле 2021
DOI: 10.34077/rcsp2021-67
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Процессы формирования упорядоченных двумерных фаз кремния (пористого силицена) на поверхности g-Si3N3/Si(111)

В. Г. Мансуров1,
Ю.Г. Галицын2,
Т. В. Малин3

Abstract: В данной работе исследовались процессы формирования упорядоченных фаз кремния и возможность синтеза силицена на графеноподобных слоях g-Si3N3 и g-AlN, которые предварительно формировались на поверхности Si(111), по технологии предложенной нами ранее.

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