Постростовые Технологии Каскадных Фотоэлектрических Преобразователей На Основе a-=sup=-3-=/Sup=-B-=sup=-5-=/SUP=--гетероструктур

Abstract

Investigation and development of the post-growth technology for fabricating multi-junction photovoltaic converters based on GaInP/GaInAs/Ge heterostructure has been carried out. Antireflection coating, ohmic contacts and mesa-structure forming stages have been reviewed. The technology of n+-GaAs contact layer etching with the help of plasma-chemical, liquid and ion-beam etching has been investigated. Antireflection coefficient of radiation from the heterostructure with TiOx/SiO2 (x close to 2) antireflection coating surface was less then 3% in wavelength range 450-850 nm. The value of contact resistance for n- and p-type conductivity was 3E−5 − 3E−6 ohm · cm2, the decrease of photosensitive region shading degree at increased bus-bar conductivity has been archived. The mesa-structure surface current leakage decreased to the value of E-9 A at voltage less then 1 V.