Полевой Транзистор Миллиметрового Диапазона Длин Волн На Основе Псевдоморфной Гетероструктуры С Дополнительными Потенциальными Барьерами

Abstract

The results of millimeter – wave field – effect transistors with a 0.14 µm T – gate on pseudomorphic heterostructures Al0.3Ga0.7As – In0.22Ga0.78As – Al0.3Ga0.7As with additional potential barriers based on two-way donor-acceptor channel doping study are presented. At a frequency of 40 GHz in a wide range of gate voltages, a maximum stable gain of more than 15 dB is achieved. The maximum frequency of the device generation is about 250 GHz, the specific current density at the open channel is about 0.7 A / mm, the breakdown voltage of the gate-drain, depending on the version, is 22 -31 V.