Особенности частотной зависимости вольт-фарадных характеристик полупроводниковой структуры фотоэлектрического преобразователя на основе p-n-перехода с антиотражающей пленкой пористого кремния

Трегулов, В.В.

doi:10.21883/jtf.2018.12.46789.83-18

Журнал Технической Физики

2018

DOI: 10.21883/jtf.2018.12.46789.83-18

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Особенности частотной зависимости вольт-фарадных характеристик полупроводниковой структуры фотоэлектрического преобразователя на основе p-n-перехода с антиотражающей пленкой пористого кремния

В.В. Трегулов¹

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