Abstract:A new trigonal (rhombohedral) SiC phase, existence of which was previously theoretically predicted by a symmetry analysis, is studied. It is shown that the phase can be formed during the growth of SiC films by the method of substitution of atoms on the surface of a Si substrate. Ab initio calculations of the crystal structure of a new phase and its Raman spectra are performed by the quantum chemistry method. The difference of the selection rules for the Raman active vibrations for this rhombohedral phase from … Show more
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