Нелинейность вольт-амперных характеристик однородных компенсированных детекторных структур из GaAs

Abstract

The paper presents the results of the study of charge carrier transport and deep level recharging in semiconductor structures for ionizing radiation detectors. The resistive gallium arsenide structures with Schottky barriers and a uniform distribution of the deep chromium acceptor and the deep EL2 donor centers were studied. The effect of depletion of the volume of detector structures with electrons has been found by solving the continuity and Poisson equations with the use of a commercial software. It is found that the nonlinearity of the current-voltage characteristics of the structures is associated with change in the conductivity type under transition from an equilibrium to a nonequilibrium state. In this case, the structures with the initial equilibrium p-type conductivity have current-voltage characteristics close to linear.