Механизм переноса заряда в новом магнитном топологическом изоляторе MnBi-=SUB=-0.5-=/SUB=-Sb-=SUB=-1.5-=/SUB=-Te-=SUB=-4-=/SUB=-

Abstract

New layered magnetic topological insulator with the composition MnBi0.5Sb1.5Te4 is obtained. In-layer plane electrical resistivity and electrical resistivity in the direction perpendicular to the layers have been studied over the wide temperature range 1.4-300K. It is found that the temperature dependence of the resistivity ρ(Т) exhibits "metallic" behavior in both directions in a temperature range above 50K. Below 50K ρ is growing with decreasing temperature and shows nontrivial behavior with a peculiarity near the critical temperature Tc=23K. The growth of resistivity in the temperature range 50-23K is caused by spin fluctuations which precede magnetic phase transition at 23K. Below Тc and down to 1.4 K, the behavior of ρ(Т) represents a typical manifestation of the effect of weak localization, as confirmed by the analysis of the obtained data on magnetoresistance.