Комплексное исследование кластеров радиационных дефектов в GaAs-структурах после нейтронного воздействия

Abstract

The results of experimental studies of the electrical parameters and surface morphology of GaAs structures of ring and circular Schottky diodes before and after irradiation with ~ 1 MeV neutrons are presented. Bulk radiation defects were revealed by atomic force microscopy (AFM). Based on the results of capacitance-voltage measurements, the concentration of electrons was determined and their mobility was estimated before and after irradiation. On the basis of the results obtained using a combination of these methods, a technique is proposed for determining the average sizes of the space charge regions of clusters of radiation defects.

Особенности Трансформации Микрорельефа Структур "Кремний На Изоляторе" При Воздействии Фотонных И Корпускулярных Излучений

“…По данным АСМ была оценена средняя площадь кластеров, возникающих после радиационного воздействия [2,3].…”