Исследование пороговой энергии оже-рекомбинации в волноводных структурах с квантовыми ямами HgTe/Cd-=SUB=-0.7-=/SUB=-Hg-=SUB=-0.3-=/SUB=-Te в области 14 мкм

Abstract

Stimulated emission from a heterostructure with Hg_0 . 903Cd_0 . 097Te/Cd_0 . 7Hg_0 . 3Te quantum wells, placed in a waveguide layer of wide-gap CdHgTe, is obtained at wavelengths of 14–11 μm and a temperatures of 18–80 K. The threshold Auger recombination energy is calculated for a set of heterostructures with quantum wells of pure HgTe with a band gap of 90 meV (wavelength 14 μm). The possibility of fabricating lasers operating at 14 μm and working temperatures higher than that of liquid nitrogen is demonstrated.