Импульсное лазерное облучение светоизлучающих структур со слоем (Ga,Mn)As

Abstract

InGaAs/GaAs heteronanostructures with a (Ga,Mn)As layer on the surface were fabricated by MOCVD epitaxy and pulsed laser deposition, and the effect of a pulsed excimer laser (wavelength 248 nm, pulse duration ~ 30 ns) on their radiative, structural and galvanomagnetic properties was studied. The radiation energy density was varied in the range from 200 to 360 mJ/cm2. In the studies, photoluminescence spectroscopy was used, which makes it possible to analyze the polarization characteristics of the radiation of the structures. The crystalline perfection of the initial and laser-irradiated samples was studied using Raman spectroscopy. The elemental composition of the structures and its depth distribution were studied by secondary ion mass spectrometry. The effect of pulsed laser annealing on the ferromagnetic properties of heteronanostructures was characterized by the behavior of the magnetic field dependences of the Hall resistance and magnetoresistance at temperatures of 10–300 K in the range of magnetic fields ± 3600 Oe. At room temperature, the study was carried out in magnetic fields reaching values of ± 28000 Oe. To obtain the calculated temperature distributions along the sample thickness and in time using a model of the laser annealing process based on solving the problem of heat propagation in a one-dimensional GaAs system taking into account the (Ga,Mn)As layer on the surface, we used the original data on the thermal conductivity coefficient of structures with a layer (Ga,Mn)As obtained using a modified frequency separation technique (3ω-method).