Излучательные характеристики мощных полупроводниковых лазеров (1060 нм) с узким мезаполосковым контактом на основе асимметричных гетероструктур AlGaAs/GaAs с широким волноводом

Abstract

Light characteristics of narrow-stripe lasers (5.5 m) based on asymmetric AlGaAs/GaAs heterostructures are studied. It was shown that the maximum optical power achieved under continuous-wave (CW) operation is limited by thermal heating and reaches 1695 mW at a current of 2350 mA at +25°C, and the maximum efficiency reaches 54.8 %. By reducing the operating temperature to -8°C, we were able to increase the maximum power to 2 W. A peak power of 2930 mW was obtained under pulsed operation (pulse width 240 ns, amplitude 4230 mA). It is shown there is a region of an “optical dip” in the power profile with a low-efficiency lasing of a train of pulses of sub-ns duration under pulsed operation.

Energy States of Particles in a Quantum Sized Structure With a Complex Shaped Band Diagram

“…The greatest interest in the creation and modernization of the element base of nanoelectronics is the production of discrete elements for optoelectronic and non-optoelectronic applications, such as injection semiconductor lasers and highly directional high-power LEDs, amplifiers and modulators of optical radiation, as well as field-effect transistors with a nanochannel, resonant tunneling diodes, resonant-tunnel transistors, bipolar transistors with nanoscale base. With the development of technological methods of nanoelectronics, special attention is paid to the creation of semiconductor devices with superlattices [7][8][9][10].…”

“…No. 4 (14) located in a built-in or external electric field were considered [7,8,10,13,16]. The aim of this work is to study the interaction of quantum-confined and quasicontinuum energy states of particles under the action of an external stationary electric field applied perpendicular to the planes of quantum confinement.…”

“…Such as quantum wells with a complex structure or simple wells located in a built-in or external electric field. Nonlinear optical properties of asymmetric quantum-well semiconductor structures are applicable to heterosystems GaAs/AlGaAs, Si/SiGe, AlInAs/GaInAs, GaN/AlGaN [5,[8][9][10][11][12][13].…”

Исследование динамики выходной оптической мощности полупроводниковых лазеров (1070 nm) с маломодовым латеральным волноводом мезаполосковой конструкции при сверхвысоких токах накачки

“…Гетероструктура включала широкозонные эмиттеры на основе n-AlGaAs (x = 30%) и p-AlGaAs (x = 30%), которые ограничивали волноводный слой на основе AlGaAs (x = 10%) толщиной 1.7 µm, в котором располагалась квантовая яма InGaAs толщиной 9 nm, смещенная относительно центра в сторону p-эмиттера на 0.2 µm. Результаты исследований одномодовых лазеров с узким мезаполосковым контактом (W = 5 µm), изготовленных на основе данной структуры, представлены в [5]. В рамках настоящей работы для экспериментальных исследований были изготовлены образцы полупроводниковых лазеров с расширенным мезаполосоковым волноводом шириной 10 µm и длиной резонатора Фабри−Перо 4.6 mm.…”