Зависимость люминесцентных свойств упорядоченных групп Ge(Si) наноостровков от параметров ямок на структурированной поверхности подложки "кремний на изоляторе"

Abstract

This paper presents the results of studies of the luminescence properties of structures with Ge(Si) quantum dots (QDs), in which a pit-patterned surface of silicon on insulator substrate served both for the spatial ordering of QDs and for the formation of a two-dimensional photonic crystal. It is shown that by choosing the parameters of pit-patterned substrate (the diameter of the pits and the period of their location), it is possible to provide a significant increase of intensity of the QD luminescence signal in the near-IR range. This enhancement is associated with interaction of spatially ordered QD emission with the modes of a photonic crystal formed by the pattern of pits. The effect of amplification of the luminescence signal persists up to room temperature.