Гетероструктуры AlGaAs/InGaAs/GaAs для ключевых pHEMT-транзисторов

Abstract

The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided δ-doping at 6×1012 cm-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100 μm, respectively. The resulting transistors had the following parameters: gm = 400 mS/mm, saturation current ID=380 mA/mm, ON-state resistance 1.0 Ω×mm, OFF-state capacitance 0.37 pF/mm. The switch parameters at 20 GHz are: insertion loss -2.2 dB, isolation -56 dB, return loss -11.7 dB, linearity P1dB 21 dBm and IIP3 40 dBm.