Влияют ли химические эффекты на накопление структурных нарушений при имплантации в GaN ионов фтора?

Abstract

Structural damage buildup in GaN under irradiation by 1.3 and 3.2 keV/amu F and Ne ions has been studied. It is shown that chemical effects during irradiation with fluorine ions do not enhance formation of stable structural damage on the surface or in the bulk of GaN at all the doses considered.